Growth and luminescent properties of scintillators based on the single crystalline films of Lu3−xGdxAl5O12:Ce garnet
作者： Yu Zorenko , V. Gorbenko , Ja Vasylkiv , A. Zelenyj , A. Fedorov
DOI: 10.1016/J.MATERRESBULL.2015.01.020
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摘要: Highlights: • Single crystalline films of Lu{sub 3−x}Gd{sub x}Al{sub 5}O{sub 12} garnets at x = 0 ÷ 3.0 were grown by LPE method onto YAG substrates. Lattice constant 3−}Gd{sub 12}:Ce film and the misfit m between substrate changed linearly with increasing Gd content. Effective Gd{sup 3+}–Ce{sup 3+} energy transfer occurs in films. Best scintillation light yield is observed 3}Al{sub 2.4}Gd{sub 0.6}Al{sub Increase content 1.5–2.5 range results decreasing LY - Abstract: The work related to growth scintillators based on single (SCF) Ce{sup doped mixed rare-earth Liquid Phase Epitaxy (LPE) method. We have shown, that full set SCFs values ranging from can be successfully crystallized Y{sub (YAG) substrates melt-solutions PbO-B{sub 2}O{sub 3} flux. absorption, X-ray excited luminescence, photoluminescence, thermoluminescencemore » measurements, latter under excitation α-particles {sup 239}Pu 241}Am radioisotopes, applied for their characterization.« less
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