Direct Growth of Single- and Few-Layer MoS2 on h-BN with Preferred Relative Rotation Angles

作者: Aiming Yan , Jairo Velasco , Salman Kahn , Kenji Watanabe , Takashi Taniguchi

DOI: 10.1021/ACS.NANOLETT.5B01311

关键词:

摘要: Monolayer molybdenum disulfide (MoS 2 ) is a promising two-dimensional direct-bandgap semiconductor with potential applications in atomically thin and flexible electronics. An …

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