Method of forming embedded DRAM structure
作者： Carole Craig Barron , Yasuhito Shiho
DOI:
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摘要: A method for forming an embedded DRAM integrated circuit (10) begins by asymmetric source and drain structure on the pass transistors. The transistor has a lightly doped shallow current electrode (60) that connects to trench capacitor (30, 28, 24). bit line of is formed having LDD region adjacent highly (76). (76) helped improve data retention reliability. In addition, connected silicided form silicide (80) which improved coupling overlying tungsten plug (84). P-type halo implant (78) used reduce or eliminate adverse short channel effects within device.
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