Coupling MOS quantum dot and phosphorous donor qubit systems

摘要: Si-MOS based QD qubits are attractive due to their similarity the current semiconductor industry. We introduce a highly tunable MOS foundry compatible qubit design that couples an electrostatic quantum dot (QD) with implanted donor. show for first time coherent two-axis control of two-electron spin logical evolves under QD-donor exchange interaction and hyperfine donor nucleus. The two interactions tuned electrically surface gate voltages provide both axes. Qubit decoherence is influenced by charge noise, which similar strength as epitaxial systems like GaAs Si/SiGe.