Dielectric Breakdown of SiO2 Grown on Rough Si Surfaces
作者： J. P. Gambino , T. N. Nguyen , B. Cunningham , J. F. Shepard
DOI: 10.1007/978-1-4899-0774-5_49
关键词:
摘要: SiO2 grown on CC12F2 reactive ion etched Si has very low breakdown fields, due to etching (RIE)-induced surface roughness. Oxidation of the rough results in a Si-SiO2 interface and surface. The fields are field enhancement from bumps at injecting electrode. sharpness bumps, hence enhancement, is greatest interface. state density, minority carrier generation lifetime, oxide flatband voltage, mobile charge, hole trapping, comparable for metal-oxide-semiconductor (MOS) capacitors fabricated CC12F2-etched control (no RIE).
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