Efficiency improvement of quantum well solar cell with the AuGeNi metallization and Si 3 N 4 ARC design
作者： TARIK Asar , ÜC Başköse , K Kızılkaya , HI Efkere , S Özçelik
DOI: 10.1080/14786435.2015.1099756
关键词:
摘要: This study demonstrates the power conversion efficiency enhancement on In0.19Ga0.81As/GaAs quantum well solar cells (QWSC). The cell structure was grown n-type (100)-oriented GaAs substrate by using solid-source molecular beam epitaxy technique and divided into square pieces. In order to understand whether eight wells were or not, scanning electron microscopy (SEM), secondary ion mass spectrometry characterizations done at room temperature. After that, Si3N4 antireflection layers coated onto both two pieces of QWSC p-GaAs different temperatures radio frequency magnetron sputtering system. optical properties uncoated samples have been evaluated means ultraviolet-visible measurements According results, best one obtained 100 °C Thus, ...
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