Self-assembled growth and optical emission of silver-capped silicon nanowires

摘要: Structured silver-capped silicon nanowires were fabricated via electroless metal deposition on a wafer in an ionic silver HF solution through selective chemical etching. Their formation mechanism was explained the basis of self-assembled localized microscopic electrochemical cell model. The metal–semiconductor composite nanostructure found to have strong ultraviolet-emitting property with emission peak position at 330 nm. intensity nonmonotonously varies annealing temperature and time, but its remains unchanged. Emission excitation spectral analyses suggest that ultraviolet is closely related existence vacancy defects nanocaps formed during sample fabrication. A specific density required produce emission.