The novel SCR-based ESD protection with low triggering and high holding voltages
作者： Myounggon Kang , Ki-Whan Song , Byung-Gook Park , Hyungcheol Shin
DOI: 10.1016/J.MEJO.2011.04.009
关键词:
摘要: This paper introduces a novel silicon controlled rectifier (SCR)-based circuit. The proposed device using 70nm DRAM process obtained the high holding and low triggering voltages by variable IR drop. These characteristics enable to discharge electrostatic (ESD) current ensure latch-up immunity for normal operations. Also, scheme is easily implemented through modification of metal connection compare conventional SCR-based device. We investigated electrical both measurements TCAD simulations. Measurement results showed SCR had voltage 6.2V, 3.3V, second breakdown 58mA/@mm.
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