Marked enhancement of 320–360 nm ultraviolet emission in quaternary InxAlyGa1−x−yN with In-segregation effect
作者： Hideki Hirayama , Atsuhiro Kinoshita , Takayoshi Yamabi , Yasushi Enomoto , Akira Hirata
DOI: 10.1063/1.1433162
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摘要: We demonstrated room-temperature (RT) intense ultraviolet (UV) emission in the wavelength range of 315–370 nm from quaternary InxAlyGa1−x−yN alloys grown by metalorganic vapor-phase epitaxy. found that UV is considerably enhanced In-segregation effect upon introducing 2%–5% In into AlGaN. The incorporation markedly with increase Al content when using a relatively high growth temperature (830–850 °C), resulting efficient RT emission. Maximally was obtained at around 330–360 fabricated (x=2.0%–4.8%,y=12%–34%). intensity 330 In0.034Al0.12Ga0.85N as strong 430 In0.22Ga0.78N RT. clearly observed segregation submicron size cathode luminescence images InAlGaN films.
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