Effect of simultaneous chemical substitution of A and B sites on the electronic structure of BiFeO3 films grown on BaTiO3/SiO2/Si substrate

摘要: Electrical properties and electronic structure of Bi1−xCaxFe1−yMnyO3−δ grown by pulsed-laser deposition on BaTiO3/SiO2/Si substrate were investigated. Results showed that Ca has drastic effect symmetry crystal electrical poperties BiFeO3. On the other hand, Mn revealed to have more radical optical energy gap compound. XPS results represented although tend decrease Fe valence state, tends stabilize it at 3+ (at least in this concentrations). UV–visible study yielded bandgap 2.51–2.81 eV 300 K) for different concentrations Mn. spectra also sub-bandgap defect transitions 2.2 2.4 eV. Slave-particle approach been applied elucidate nature metal–insulator transition.