Current–voltage characteristics and electrical transport properties of grain boundaries in La1−x(Sr/Ca)xMnO3
作者： N. K. Todd , N. D. Mathur , S. P. Isaac , J. E. Evetts , M. G. Blamire
DOI: 10.1063/1.370542
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摘要: Grain boundaries in doped lanthanum manganites have been shown to a large low-field magnetoresistance. However, the mechanism of electrical transport across grain boundaries, and origin magnetoresistance, are not well understood. Models based on scattering at domain walls, spin-polarized tunneling depression Curie temperature due strain near boundary all proposed. This article reports detailed studies properties artificial formed variety thin films grown bicrystal substrates. Resistance versus field sweeps devices showed strong magnetoresistance effect individual motion has observed single boundaries. In cases, current voltage characteristics were highly non-ohmic, reminiscent an electron process. magnetic dependence current–voltage implies that may be unrelated tunneling.
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