Free Exciton Radiative Recombination in GaAs Quantum Wells
作者： B. Deveaud , F. Clérot , B. Sermage , C. Dumas , D.S. Katzer
DOI: 10.1007/978-94-011-1912-2_13
关键词:
摘要: Radiative properties of free excitons in GaAs quantum wells are studied under resonant excitation. We first show that we do observe by their Lorentzian lineshape and mobility the plane well. Enhanced radiative recombination excitons, a consequence breakdown translational symmetry induced well potential, is evidenced very short lifetime as strong intensity luminescence signal. Dephasing mechanisms, transferring into non-radiative states, increase observed lifetime. In same way, sample temperature, or exciton temperature non-resonant excitation, increases decay time reducing population close to k = 0. From our experiments, deduce 10 ± 4 ps absence dephasing mechanisms.
springer.com
sci-hub.st 参考文章(32)
Excitons in Confined Systems Applied Optics. ,vol. 28, pp. 2439- ,(1988) , 10.1007/978-3-642-73291-1
Michel Orrit, Claude Aslangul, Philémon Kottis, Quantum-mechanical-model calculations of radiative properties of a molecular crystal. I. Polaritons and abnormal decays of excitons in one- and two-dimensional systems Physical Review B. ,vol. 25, pp. 7263- 7280 ,(1982) , 10.1103/PHYSREVB.25.7263
S. Schmitt-Rink, D.S. Chemla, D.A.B. Miller, Linear and nonlinear optical properties of semiconductor quantum wells Advances in Physics. ,vol. 38, pp. 89- 188 ,(1989) , 10.1080/00018738900101102
B. Deveaud, F. Clérot, N. Roy, K. Satzke, B. Sermage, D. Katzer, Enhanced radiative recombination of free excitons in GaAs quantum wells. Physical Review Letters. ,vol. 67, pp. 2355- 2358 ,(1991) , 10.1103/PHYSREVLETT.67.2355
C. Weisbuch, R. Dingle, A.C. Gossard, W. Wiegmann, Optical characterization of interface disorder in GaAs-Ga1-xAlxAs multi-quantum well structures Solid State Communications. ,vol. 38, pp. 709- 712 ,(1981) , 10.1016/0038-1098(81)90401-4
J. Aaviksoo, Time-resolved studies of excitonic polaritons Journal of Luminescence. ,vol. 48-49, pp. 57- 66 ,(1991) , 10.1016/0022-2313(91)90076-8
Benoit Deveaud, T. C. Damen, Jagdeep Shah, C. W. Tu, Dynamics of exciton transfer between monolayer‐flat islands in single quantum wells Applied Physics Letters. ,vol. 51, pp. 828- 830 ,(1987) , 10.1063/1.98826
G. W. p’t Hooft, W. A. J. A. van der Poel, L. W. Molenkamp, C. T. Foxon, Giant oscillator strength of free excitons in GaAs. Physical Review B. ,vol. 35, pp. 8281- 8284 ,(1987) , 10.1103/PHYSREVB.35.8281
D. Gammon, B. V. Shanabrook, D. S. Katzer, Interfaces in GaAs/AlAs quantum well structures Applied Physics Letters. ,vol. 57, pp. 2710- 2712 ,(1990) , 10.1063/1.103807
C. Weisbuch, R.C. Miller, R. Dingle, A.C. Gossard, W. Wiegmann, Intrinsic radiative recombination from quantum states in GaAs-AℓxGa1−xAs multi-quantum well structures Solid State Communications. ,vol. 88, pp. 943- 946 ,(1993) , 10.1016/0038-1098(93)90274-Q