Morphology and photoluminescence of ZnO nanorods grown on sputtered GaN films with intermediate ZnO seed layer

摘要: Abstract ZnO nanorods (NRs) were grown by chemical bath deposition on sputtered GaN over Si with and without seed layers. The effect of layer thickness, precursor concentration growth temperature the morphology photoluminescence (PL) ZnO-NRs has been studied. Scanning electron microscopy studies at different stages have shown that thickness is critically important for controlling behavior, density surface. bare GaN/Si grow a large diameter small aspect ratio ∼4, displaying tendency lateral growth. Introduction thin (10 nm) under optimized drastically increases to ∼16, due partial coverage surface moderate nucleation critical size. layers higher (50 nm 100 nm) result in reduced increase limited availability reacting species. Increase results pronounced decrease also compact ratios. Room show GaN, or temperature, display high near-band-edge luminescence negligible defect emission, compared Si, as well those lower temperatures. enhanced PL attributed absence crystalline defects nanorod interfaces coalescence, arising from slight misalignment nanorods.