摘要: Abstract The epitaxial growth of GaN by vapor phase reaction between GaCl and NH 3 in a He carrier gas ancient is described. Single crystal layers 100–200 ωm thick ∼ 1 cm 2 area, were obtained on (0001) oriented sapphire substrates at deposition temperatures near 1050 °C. best undoped grown had concentrations 1–2 × 10 17 −3 with electron mobilities 400 /V sec 300 K.
harvard.edu
elsevier.com
sci-hub.se 参考文章(11)
Daniel R. Stull, JANAF thermochemical tables 堀越研究所. ,(1966)
R. B. Zetterstrom, Synthesis and growth of single crystals of gallium nitride Journal of Materials Science. ,vol. 5, pp. 1102- 1104 ,(1970) , 10.1007/BF02403284
D.K. Wickenden, K.R. Faulkner, R.W. Brander, B.J. Isherwood, Growth of epitaxial layers of gallium nitride on silicon carbide and corundum substrates Journal of Crystal Growth. ,vol. 9, pp. 158- 164 ,(1971) , 10.1016/0022-0248(71)90225-9
B. B. Kosicki, D. Kahng, Preparation and Structural Properties of GaN Thin Films Journal of Vacuum Science and Technology. ,vol. 6, pp. 593- 596 ,(1969) , 10.1116/1.1315693
Zuhair A. Munir, Alan W. Searcy, Activation Energy for the Sublimation of Gallium Nitride The Journal of Chemical Physics. ,vol. 42, pp. 4223- 4228 ,(1965) , 10.1063/1.1695924
J. I. Pankove, H. P. Maruska, J. E. Berkeyheiser, OPTICAL ABSOPTION OF GaN Applied Physics Letters. ,vol. 17, pp. 197- 199 ,(1970) , 10.1063/1.1653363
R. Dingle, D. D. Sell, S. E. Stokowski, M. Ilegems, Absorption, Reflectance, and Luminescence of GaN Epitaxial Layers Physical Review B. ,vol. 4, pp. 1211- 1218 ,(1971) , 10.1103/PHYSREVB.4.1211
Richard C. Schoonmaker, Albert Buhl, James Lemley, Vaporization Catalysis. The Decomposition of Gallium Nitride1 The Journal of Physical Chemistry. ,vol. 69, pp. 3455- 3460 ,(1965) , 10.1021/J100894A035
H. P. Maruska, J. J. Tietjen, THE PREPARATION AND PROPERTIES OF VAPOR‐DEPOSITED SINGLE‐CRYSTAL‐LINE GaN Applied Physics Letters. ,vol. 15, pp. 327- 329 ,(1969) , 10.1063/1.1652845
R. Dingle, K. L. Shaklee, R. F. Leheny, R. B. Zetterstrom, Stimulated Emission and Laser Action in Gallium Nitride Applied Physics Letters. ,vol. 19, pp. 5- 7 ,(1971) , 10.1063/1.1653730