Investigation of local strain distribution and linear electro-optic effect in strained silicon waveguides.

摘要: We present detailed investigations of the local strain distribution and induced second-order optical nonlinearity within strained silicon waveguides cladded with a Si3N4 layer. Micro-Raman Spectroscopy mappings electro-optic characterization varying width wWG show that gradients in waveguide core effective susceptibility χ(2)yyz increase reduced wWG. For 300 nm wide mean 190 pm/V is achieved, which highest value reported for so far. To gain more insight into origin extraordinary large numerical simulations edge these structures are presented discussed.