High‐barrier height metal‐insulator‐semiconductor diodes on n‐InP
作者： Y. S. Lee , W. A. Anderson
DOI: 10.1063/1.343331
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摘要: Metal‐insulator‐semiconductor diodes were fabricated using Pd, Ni, and Au contacts on n‐InP covered by a 40‐A chemically grown oxide. The oxide had refractive index of 1.4–1.6 with composition mainly In2O3+some InPO3 near the surface mixed oxide+InP interface. Pd devices gave highest‐barrier height 0.80 eV lowest reverse saturation current density 3×10−8 A/cm2. Current‐voltage‐temperature capacitance‐voltage‐temperature data temperature dependence barrier revealed an interface state recombination mechanism states 0.4 above valence‐band level. Richardson plots good straight lines when empirically corrected divided ideality factor.
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