Directional and ionized physical vapor deposition for microelectronics applications

摘要: The manufacturing of interconnect features on semiconductor wafers has evolved from lift-off-based evaporation to reactive ion etching metallization and now Damascene technology. Physical sputter deposition been widely used for blanket metal film deposition, but is impractical high aspect topographies. Filtered, or directional techniques, such as long throw collimation, have some ratio applications, suffer poor efficiency, cost, and/or scaling. Ionized which uses in-flight ionization sputtered atoms subsequent by means a substrate potential, developed technique extend physical vapor into higher ratios.