Method of making and accessing split gate memory device
作者： Kuo-Tung Chang , Lee Z. Wang , Craig Swift , Wei-Ming Chen
DOI:
关键词:
摘要: A non-volatile memory having a control gate (14) and sidewall select (28) is illustrated. The formed in conjunction with semiconductor doped oxide (20) to form cell (7). element used dope the layer will generally include silicon or germanium. (7) programmed by storing electrons (20), erased using band-to-band tunneling.
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