The chemistry of the compound semiconductor-intrinsic insulator interface
作者： N N Berchenko , Yu V Medvedev
DOI: 10.1070/RC1994V063N08ABEH000108
关键词:
摘要: … t We may note that a method for the modulation of the … intrinsic defects may be oxygen vacancies and the ruptured … low rate of oxidation it corresponds to 41 nm for an overall thickness of …
harvard.edu
sci-hub.se 
researchgate.net 参考文章(119)
G.A. Baraff, EL2 IN GaAs: PRESENT STATUS Acta Physica Polonica A. ,vol. 82, pp. 599- 607 ,(1992) , 10.12693/APHYSPOLA.82.599
R.P. Leon, E.R. Weber, A NEW TYPE OF SEMI-INSULATING MATERIALS Acta Physica Polonica A. ,vol. 82, pp. 664- 669 ,(1992) , 10.12693/APHYSPOLA.82.664
M.-P. Besland, P. Louis, Y. Robach, J. Joseph, G. Hollinger, D. Gallet, P. Viktorovitch, Growth of passivating UV/ozone oxides on InP: Correlations between chemical composition and interfacial electrical properties Applied Surface Science. pp. 846- 854 ,(1992) , 10.1016/0169-4332(92)90349-3
S. J. Sferco, G. Allan, I. Lefebvre, M. Lannoo, E. Bergignat, G. Hollinger, Electronic structure of semiconductor oxides: InPO4, In(PO3)3, P2O5, SiO2, AlPO4, and Al(PO3)3. Physical Review B. ,vol. 42, pp. 11232- 11239 ,(1990) , 10.1103/PHYSREVB.42.11232
G. H. Winton, K. Prasad, L. Faraone, M. A. C. Hotchkis, Passivation of Hg 1-x Cd x Te by photochemical native oxidation: growth characteristics Journal of Electronic Materials. ,vol. 22, pp. 365- 373 ,(1993) , 10.1007/BF02661664
Chang Wei, Krishnan Rajeshwar, J. D. Luttmer, Passivation of Mercury Cadmium Telluride Surfaces via Electrochemical Generation of a Zinc Telluride Layer Journal of The Electrochemical Society. ,vol. 140, pp. 829- 834 ,(1993) , 10.1149/1.2056167
A. Callegari, P. D. Hoh, D. A. Buchanan, D. Lacey, Unpinned gallium oxide/GaAs interface by hydrogen and nitrogen surface plasma treatment Applied Physics Letters. ,vol. 54, pp. 332- 334 ,(1989) , 10.1063/1.100961
H.-U. Baier, L. Koenders, W. Mönch, Oxidation of InAs(110) surfaces: Auger electron, electron energy loss and ultraviolet photoemission spectroscopy Surface Science. ,vol. 184, pp. 345- 358 ,(1987) , 10.1016/S0039-6028(87)80362-X
C. Y. Su, I. Lindau, P. W. Chye, P. R. Skeath, W. E. Spicer, Photoemission studies of the interaction of oxygen with GaAs(110) Physical Review B. ,vol. 25, pp. 4045- 4068 ,(1982) , 10.1103/PHYSREVB.25.4045
M. P. Besland, Y. Robach, J. Joseph, In Situ Studies of the Anodic Oxidation of Indium Phosphide Journal of The Electrochemical Society. ,vol. 140, pp. 104- 108 ,(1993) , 10.1149/1.2056067