First-principles investigations of the dielectric properties of crystalline and amorphous Si3N4 thin films
作者： T. Anh Pham , Tianshu Li , Sadasivan Shankar , Francois Gygi , Giulia Galli
DOI: 10.1063/1.3303987
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摘要: We have investigated the dielectric properties of silicon nitride thin films with thickness below 6 nm, by using density functional theory calculations. find a substantial decrease in static constant crystalline films, as their size is reduced. The variation response proximity surface plays key role observed decrease. In addition, amorphization may bring further reduction both and optical constants.We constants.
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