Photovoltage saturation and recombination at Al-GaAs interfacial layers
作者： L.J. Brillson , D.W. Kruger
DOI: 10.1016/0039-6028(81)90043-1
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摘要: Abstract Surface photovoltage versus light intensity measurements for Al on UHV-cleaved GaAs(110) surfaces demonstrate that photoinduced band flattening can determine the bending within semiconductor surface space charge region metal coverages of two monolayers or less. Above a few monolayers, increased interfacial recombination reduces otherwise saturated photovoltage. Absolute permit determination dipole voltage across layer at this semiconductor-metal junction.
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