作者: E. Kinsbron
DOI: 10.1063/1.91385
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摘要: Aluminum thin‐film conductors with a variety of linewidths (1–8 μ) were stressed at high temperature (200 °C) and current density (2×106 A cm−2) to determine the dependence on linewidth time failure due electromigration. A new model is based consideration film microstructure presence stress‐induced countercurrent flow matter in short thin films during passage electrical current. The can explain increase lifetime observed stripes below 2 μm.