7.5 kW/mm 2 Current Swith using AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field Effect Transistors on SiC Substrates
作者： G. Simin , X. Hu , N. Ilinskaya , A. Kumar , A. Koudymov
DOI: 10.1049/EL:20001401
关键词:
摘要: A fast high-power solid-state switch based on a novel large periphery multigate AlGaN/GaN metal-oxide-semiconductor heterostructure field effect transistor (MOSHFET) over 4H-SiC substrates is demonstrated. For device with 1 mm and 10 µm gate-drain spacing, 7.5 kW/mm2 of switched power on-state resistance 75 mΩ × mm2 obtained. The pulse response the MOSHFET exhibited rise-time < 5 ns in pulsemode operation.
harvard.edu
sci-hub.se 参考文章(7)
M. Asif Khan, X. Hu, A. Tarakji, G. Simin, J. Yang, R. Gaska, M. S. Shur, AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors on SiC substrates Applied Physics Letters. ,vol. 77, pp. 1339- 1341 ,(2000) , 10.1063/1.1290269
Hiroshi Yano, Taichi Hirao, Tsunenobu Kimoto, Hiroyuki Matsunami, High Channel Mobility in Inversion Layer of SiC MOSFETs for Power Switching Transistors Japanese Journal of Applied Physics. ,vol. 39, pp. 2008- 2011 ,(2000) , 10.1143/JJAP.39.2008
M.S. Shur, M.A. Khan, X. Hu, G. Sumin, A. Lunev, J. Yang, R. Gaska, AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor IEEE Electron Device Letters. ,vol. 21, pp. 63- 65 ,(2000) , 10.1109/55.821668
N.X. Nguyen, M. Micovic, W.-S. Wong, P. Hashimoto, L.-M. McCray, P. Janke, C. Nguyen, High performance microwave power GaN/AlGaN MODFETs grown by RF-assisted MBE Electronics Letters. ,vol. 36, pp. 468- 469 ,(2000) , 10.1049/EL:20000352
C.E. Weitzel, J.W. Palmour, C.H. Carter, K. Moore, K.K. Nordquist, S. Allen, C. Thero, M. Bhatnagar, Silicon carbide high-power devices IEEE Transactions on Electron Devices. ,vol. 43, pp. 1732- 1741 ,(1996) , 10.1109/16.536819
G.T. Dang, A.P. Zhang, F. Ren, X.A. Cao, S.J. Pearton, H. Cho, J. Han, J.-I. Chyi, C.-M. Lee, C.-C. Chuo, S.N.G. Chu, R.G. Wilson, High voltage GaN Schottky rectifiers IEEE Transactions on Electron Devices. ,vol. 47, pp. 692- 696 ,(2000) , 10.1109/16.830981
Y.-F. Wu, B.P. Keller, P. Fini, J. Pusl, M. Le, N.X. Nguyen, C. Nguyen, D. Widman, S. Keller, S.P. Denbaars, U.K. Mishra, Short-channel Al/sub 0.5/Ga/sub 0.5/N-GaN MODFETs with power density >3 W/mm at 18 GHz Electronics Letters. ,vol. 33, pp. 1742- 1743 ,(1997) , 10.1049/EL:19971127