Single-Impurity Scattering and Carrier Mobility in Doped Ge/Si Core−Shell Nanowires
作者： Hyungjun Lee , Hyoung Joon Choi
DOI: 10.1021/NL101109P
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摘要: We report electronic transport properties of doped Ge-core/Si-shell and Si-core/Ge-shell nanowires (NWs) from first-principles. obtain single-impurity scattering electrons holes using density-functional methods for quantum conductance then estimate charge-carrier mobilities considering multiple impurity scatterings. It is found that in the NW with B-doped Si P-doped Ge have higher than other chemical doping configurations. These results reflect asymmetric radial confinements charge carriers core-shell NWs show electron donors shell are as promising nanoelectronic devices acceptors shell.
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