Fullerene formation during production of chemical vapor deposited diamond

摘要: We report a novel method for fullerene formation during diamond synthesis via hot filament, chemical vapor deposition (CVD) procedure. The fullerenes occur in the soot that forms as by‐product on edges and rear surface of substrate holder, where temperature does not favor deposition. Mass spectrometry shows peak having mass to charge ratio corresponding C60. From typical concentrations gaseous species diamond‐growing CVD chamber, we conclude hydrocarbon such CH3 or C2H2 may be precursors chamber. atomic hydrogen is believed play an important role removing from form all‐carbon fullerene. Our observations also suggest produced growth chamber nucleation foreign substrates.