Structural and Optical Characterization of ZnO/MgxZn1–xO Multiple Quantum Wells Based Random Laser Diodes
作者： Qike Jiang , He Zheng , Jianbo Wang , Hao Long , Guojia Fang
DOI: 10.1021/AM302378V
关键词:
摘要: Two kinds of laser diodes (LDs) comprised ZnO/MgxZn1–xO (ZnO/MZO) multiple quantum wells (MQWs) grown on GaN (MQWs/GaN) and Si (MQWs/Si) substrates, respectively, have been constructed. The LD with MQWs/GaN exhibits ultraviolet random lasing under electrical excitation, while that MQWs/Si does not. In the MQWs/Si, ZnO/MZO MQWs consist nanoscaled crystallites, MZO layers undergo a phase separation cubic MgO hexagonal ZnO. Moreover, Mg atom predominantly locates in along significant aggregation at interfaces; sharp contrast, show well-crystallized structure epitaxial relationships among GaN, MZO, Notably, is observed to diffuse into ZnO well layers. structure–optical property relationship these two LDs further discussed.
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