Manganese-doped CdGeAs2, ZnGeAs2 and ZnSiAs2 chalcopyrites: A new materials for spintronics
作者： L.I. Koroleva , D.M. Zashchirinskii , T.M. Khapaeva , A.I. Morozov , S.F. Marenkin
DOI: 10.1016/J.JMMM.2011.05.054
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摘要: Abstract Based on Mn-doped chalcopyrites CdGeAs 2 , ZnGeAs and ZnSiAs the new dilute magnetic semiconductors with p-type conductivity were produced. Magnetization, electrical resistivity, magnetoresistance Hall effect of mentioned compositions studied. Their curves temperature dependence magnetization have similar form in spite complicated character, for which concentration mobility charge carriers are responsible. Thus, T >15 K a frustrated ferromagnetics. In compounds Zn these two states by spinglass-like state. This specific feature is assigned to an attraction Mn ions occupying neighboring sites competition between carrier-mediated exchange superexchange interactions. Curie temperatures above room temperature. These highest A II B IV C V :Mn systems.
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