Field emitter tips for vacuum microelectronic devices

摘要: The design criteria for two forms of field emitters (cone and wedge) vacuum microelectronic applications are discussed. Effects practical variations in geometry on emission current, spatial temporal dispersion electron emission, emitter heating calculated by simulation. Several guidelines the emitter–anode complex suggested. A sharp silicon tip processing method is presented, which based oxidation inhibition at regions high curvature. Methods forming other materials also