Energy transfer in erbium doped optical waveguides based on silicon

摘要: Energy transfer in erbium doped optical waveguides based on silicon This thesis describes the energy processes occurring materials that can be used for fabrication of compatible integrated circuits, operating at 1.54 mm.The consists three parts: Part I discusses waveguide amplifiers silicon. The use an intra-4f transition rare earth ion occurring mm. To achieve significant amplification, high Er concentrations (> 10 20 cm -3 ) are required. At these ions interact, resulting co-operative upconversion, which one excited is into a higher state, while neighboring returns to ground state. In this and other gain limiting effects investigated. particular, it shown atomic-scale distribution crucial importance performance amplifiers. II processes It by electron-hole pair recombination an impurity-Auger effect. effect may fabricate electrically pumped amplifier. reverse process also occur: de-excite generate silicon, due non-radiative backtransfer process. has efficiency 70% room temperature. observation enables photo-detector Si such detector discussed. III interaction between nanocrystals embedded SiO2. efficiently absorb visible light, generation quantum confined pairs. pairs Er. Due transfer, effective absorption cross section five orders magnitude larger than direct optical excitation. Silicon thus increase pumping is single nanocrystal excite ~1 time 0.6 dB/cm achieved typical sensitized broad band nanocrystals, light source can as pump