作者: B Pajot , I L Beinikhes , Sh M Kogan , M G Novak , A F Polupanov
DOI: 10.1088/0268-1242/7/9/004
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摘要: The p3/2 energy levels of the hydrogen-like single acceptor in silicon are calculated down to 1.4 meV from valence band using a non-variational method. oscillator strength transitions ground state excited states an acceptor-dependent wavefunction. A comparison is made with new high-resolution experimental data for group III acceptors B, Al and In. It shows that few predicted not observed relative intensities lines reasonable agreement strengths. This allows unambiguous assignment specific when peaks can be resolved into individual transitions, this constitutes improvement over existing situation. values highly very close ones, but small differences due chemical shift found these states. Calibration coefficients concentrations derived calculations they compared those determined experimentally. most shallow effective mass have binding energies approximately 0.8 1.0 B respectively.