Dependence of the electrical characteristics of organic‐on‐inorganic semiconductor contact barrier diodes on organic thin‐film composition

摘要: Several aromatic compounds (such as 3,4,9,10 perylenetetracarboxylic dianhydride) have previously been reported to form rectifying heterojunction energy barriers when vacuum deposited onto inorganic semiconductor substrates such Si, GaAs, and InP. In this paper we report the formation of using phthalocyanine‐based layered p‐Si substrates. many respects, characteristics phthalocyanine/Si heterojunctions are similar those formed anhydrides insofar electrical properties can be explained thermionic emission space‐charge‐limited transport model introduced in previous work. However, contrast earlier results, find that a high density surface states exist at interface. Quantitative study interface state provides insight into mechanisms organic‐on‐inorganic barrier.