作者: O Bisi , C Calandra
DOI: 10.1088/0022-3719/14/35/008
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摘要: Presents a theoretical investigation of the electronic properties bulk silicides near-noble metals (NiSi2, NiSi, Ni2,Si, PdSi, Pd2Si, PtSi and Pt2Si). The approach is provided by iterative extended Huckel method. densities states various compounds, differing in silicon content crystal structure, are presented main features chemical bond discussed. A detailed comparison with available experimental data other work presented. relevance present results for interpretation silicide/silicon interfaces also