Doping Induced Magnetization Plateaus
作者： Holger Frahm , Constantin Sobiella
DOI: 10.1103/PHYSREVLETT.83.5579
关键词:
摘要: The low temperature magnetization process of antiferromagnetic spin-S chains doped with mobile spin-(S-1/2) carriers is studied in an exactly solvable model. For sufficiently high magnetic fields the system a metallic phase finite gap for excitations. In this which exists large range carrier concentrations x zero determined by alone. This leads to plateaus curve at tunable fraction saturation magnetization. critical behaviour edges these detail.
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