Transparent amorphous conductive Cd–In–Sb–O thin films for flexible devices

作者: Hiroyuki Tetsuka , Yue Jin Shan , Keitaro Tezuka , Hideo Imoto

DOI: 10.1016/J.VACUUM.2005.11.066

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摘要: Abstract Transparent conductive amorphous Cd–In–Sb–O thin films were deposited on a flexible polyethylene naphthalate film by rf magnetron sputtering at room temperature. The large Hall mobility of ∼26 cm 2  V −1  s was observed the with carrier density >10 20  cm −3 . varied from order 10 to 17 increasing oxygen partial pressure. reached up ∼17 cm , even ∼10 Flexible transparent filed-effect transistor also fabricated using as channel layer and device performance investigated. exhibited field-effect ∼0.45 cm an on–off ratio

参考文章(6)
Kenji Nomura, Hiromichi Ohta, Akihiro Takagi, Toshio Kamiya, Masahiro Hirano, Hideo Hosono, Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors Nature. ,vol. 432, pp. 488- 492 ,(2004) , 10.1038/NATURE03090
Akihiro Takagi, Kenji Nomura, Hiromichi Ohta, Hiroshi Yanagi, Toshio Kamiya, Masahiro Hirano, Hideo Hosono, Carrier transport and electronic structure in amorphous oxide semiconductor, a-InGaZnO4 Thin Solid Films. ,vol. 486, pp. 38- 41 ,(2005) , 10.1016/J.TSF.2004.11.223
H. Q. Chiang, J. F. Wager, R. L. Hoffman, J. Jeong, D. A. Keszler, High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer Applied Physics Letters. ,vol. 86, pp. 013503- ,(2005) , 10.1063/1.1843286
John. F. Wager, Applied physics. Transparent electronics. Science. ,vol. 300, pp. 1245- 1246 ,(2003) , 10.1126/SCIENCE.1085276