作者: Hiroyuki Tetsuka , Yue Jin Shan , Keitaro Tezuka , Hideo Imoto
DOI: 10.1016/J.VACUUM.2005.11.066
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摘要: Abstract Transparent conductive amorphous Cd–In–Sb–O thin films were deposited on a flexible polyethylene naphthalate film by rf magnetron sputtering at room temperature. The large Hall mobility of ∼26 cm 2 V −1 s was observed the with carrier density >10 20 cm −3 . varied from order 10 to 17 increasing oxygen partial pressure. reached up ∼17 cm , even ∼10 Flexible transparent filed-effect transistor also fabricated using as channel layer and device performance investigated. exhibited field-effect ∼0.45 cm an on–off ratio