General Relationship for the Thermal Oxidation of Silicon
作者： B. E. Deal , A. S. Grove
DOI: 10.1063/1.1713945
关键词:
摘要: … silicon- device technology, the formation of silicon dioxide layers by thermal oxidation of single-crystal silicon … in the store of knowledge of silicon oxidation. For instance, reported …
scitation.org
harvard.edu
aip.org
sci-hub.se 
researchgate.net 参考文章(20)
A.T. Fromhold, Kinetics of oxide film growth on metal crystals—I. Journal of Physics and Chemistry of Solids. ,vol. 24, pp. 1081- 1092 ,(1963) , 10.1016/0022-3697(63)90021-0
Hermann Schlichting, Boundary layer theory ,(1955)
Linus Pauling, The Nature of the Chemical Bond ,(1939)
Norio Karube, Kakuji Yamamoto, Masahide Kamiyama, Thermal Oxidation of Silicon Japanese Journal of Applied Physics. ,vol. 2, pp. 11- 18 ,(1963) , 10.1143/JJAP.2.11
J. Bardeen, W. H. Brattain, W. Shockley, Investigation of Oxidation of Copper by Use of Radioactive Cu Tracer The Journal of Chemical Physics. ,vol. 14, pp. 714- 721 ,(1946) , 10.1063/1.1724091
Joseph R. Ligenza, Oxidation of Silicon by High-Pressure Steam Journal of The Electrochemical Society. ,vol. 109, pp. 73- 76 ,(1962) , 10.1149/1.2425359
Paul J. Jorgensen, Effect of an Electric Field on Silicon Oxidation The Journal of Chemical Physics. ,vol. 37, pp. 874- 877 ,(1962) , 10.1063/1.1733177
W. A. Pliskin, R. P. Gnall, Evidence for Oxidation Growth at the Oxide-Silicon Interface from Controlled Etch Studies Journal of The Electrochemical Society. ,vol. 111, pp. 872- 873 ,(1964) , 10.1149/1.2426271
B. E. Deal, M. Sklar, Thermal Oxidation of Heavily Doped Silicon Journal of The Electrochemical Society. ,vol. 112, pp. 430- 435 ,(1965) , 10.1149/1.2423562
N Cabrera, N F Mott, Theory of the oxidation of metals Reports on Progress in Physics. ,vol. 12, pp. 163- 184 ,(1949) , 10.1088/0034-4885/12/1/308