作者: Yoshinori Toumiya , Haruhiko Ajisawa , Keiji Tatani , Tetsuhiro Iwashita , Yuji Inoue
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摘要: A solid-state image pickup device includes a plurality of pixels on light-receiving surface, photodiodes disposed the surface semiconductor substrate while being partitioned pixel basis, signal transferring portions which are and read charges generated stored in or voltages corresponding to charges, insulating films covering photodiodes, concave films, pad electrodes passivation film covers inner walls portions, is electrodes, has refractive index higher than that silicon oxide, core layer filled oxide.