Strain relaxation and segregation effects during self-assembled InAs quantum dots formation on GaAs(001)
作者： J. M. Garcı́a , J. P. Silveira , F. Briones
DOI: 10.1063/1.126992
关键词:
摘要: In segregation effects during InAs growth on GaAs(001) and critical thickness for self-assembled quantum dots are studied using a real time, in situ technique capable of measuring accumulated stress growth. Due to large (∼50%) surface floating In, dot formation takes place when less than one monolayer is pseudomorphically grown GaAs. A picture the process discussed basis equilibrium between dominated by energy.
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J.P Silveira, F Briones, In situ observation of reconstruction related surface stress during molecular beam epitaxy (MBE) growth of III–V compounds Journal of Crystal Growth. ,vol. 201-202, pp. 113- 117 ,(1999) , 10.1016/S0022-0248(98)01301-3
J. M. Garcı́a, G. Medeiros-Ribeiro, K. Schmidt, T. Ngo, J. L. Feng, A. Lorke, J. Kotthaus, P. M. Petroff, Intermixing and shape changes during the formation of InAs self-assembled quantum dots Applied Physics Letters. ,vol. 71, pp. 2014- 2016 ,(1997) , 10.1063/1.119772
T. R. Ramachandran, R. Heitz, P. Chen, A. Madhukar, Mass transfer in Stranski–Krastanow growth of InAs on GaAs Applied Physics Letters. ,vol. 70, pp. 640- 642 ,(1997) , 10.1063/1.118848
N. Moll, M. Scheffler, E. Pehlke, Influence of surface stress on the equilibrium shape of strained quantum dots Physical Review B. ,vol. 58, pp. 4566- 4571 ,(1998) , 10.1103/PHYSREVB.58.4566
S. Maimon, E. Finkman, G. Bahir, S. E. Schacham, J. M. Garcia, P. M. Petroff, Intersublevel transitions in InAs/GaAs quantum dots infrared photodetectors Applied Physics Letters. ,vol. 73, pp. 2003- 2005 ,(1998) , 10.1063/1.122349
J. A. Floro, E. Chason, S. R. Lee, R. D. Twesten, R. Q. Hwang, L. B. Freund, Real-time stress evolution during Si 1-x Ge x heteroepitaxy: dislocations, islanding, and segregation Journal of Electronic Materials. ,vol. 26, pp. 969- 979 ,(1997) , 10.1007/S11664-997-0233-2
K H Ploog, O Brandt, InAs monolayers and quantum dots in a crystalline GaAs matrix Semiconductor Science and Technology. ,vol. 8, ,(1993) , 10.1088/0268-1242/8/1S/050
Michio Sato, Yoshiji Horikoshi, Effect of indium replacement by gallium on the energy gaps of InAs/GaAs thin‐layer structures Journal of Applied Physics. ,vol. 69, pp. 7697- 7702 ,(1991) , 10.1063/1.347542
K. Muraki, S. Fukatsu, Y. Shiraki, R. Ito, Surface segregation of In atoms during molecular beam epitaxy and its influence on the energy levels in InGaAs/GaAs quantum wells Applied Physics Letters. ,vol. 61, pp. 557- 559 ,(1992) , 10.1063/1.107835
N Kirstaedter, OG Schmidt, NN Ledentsov, D Bimberg, VM Ustinov, A Yu Egorov, AE Zhukov, MV Maximov, PS Kop’ev, Zh I Alferov, None, Gain and differential gain of single layer InAs/GaAs quantum dot injection lasers Applied Physics Letters. ,vol. 69, pp. 1226- 1228 ,(1996) , 10.1063/1.117419