作者: Eougenious L. Ivchenko , Grigory E. Pikus
DOI: 10.1007/978-3-642-60650-2_5
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摘要: One may suggest a variety of direct and convincing proofs for the validity effective mass approximation in physics semiconductors. Particularly elegant among them is argumentation based on prediction observation hydrogen-like states Coulomb center-bound carriers Wannier-Mott excitons. can say without overstating case that shallow impurity centers excitons has had rebirth with development high-quality heterostructures microscopically thin layers compositional materials. A need been found calculating account superstructure potential, difference between band parameters adjoining layers, etc.