Electronic Properties and Characterisation of Disordered Semiconductors
作者： J. M. Marshall
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摘要: This paper commences with a brief review of the conventional concepts electronic transport in solid state, for ideal single-crystal materials. It then describes manner which these must be modified to incorporate effects disorder, how parameters such as carrier mobilities are influenced, and some techniques used determine properties affected. Additionally, it is shown that computer-based modelling powerful tool predicting understanding experimental behaviour.
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