Progress and outlook for MRAM technology
作者： S. Tehrani , J.M. Slaughter , E. Chen , M. Durlam , J. Shi
DOI: 10.1109/20.800991
关键词:
摘要: We summarize the features of existing semiconductor memories and compare them to Magnetoresistive Random Access Memory (MRAM),a semiconductor memory with magnetic bits …
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