Small-area, double-heterostructure aluminum-gallium arsenide electroluminescent diode sources for optical-fiber transmission lines
作者： C.A. Burrus , B.I. Miller
DOI: 10.1016/0030-4018(71)90157-X
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摘要: Small-area (50-μm dia) electroluminescent diodes have been fabricated in double-heterostructure configurations of AlxGa1-xAs/AlyGa1-yAs/AlxGa1-xAs grown by liquid-phase epitaxy on a GaAs substrate. The light output has coupled into multimode optical fibers, and the maximum through short fiber 60 μm diameter was about 1.7 mW near 0.78-μm wavelength for bias current 150 mA dc (7500 A/cm2). room temperature operating life (to half output) at this least several thousand hours.
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