Photoreflectance analysis of annealed vanadium-doped GaAs thin films grown by metalorganic vapor phase epitaxy
作者： H. Fitouri , C. Bilel , I. Zaied , A. Bchetnia , A. Rebey
DOI: 10.1016/J.SSC.2015.05.010
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摘要: Abstract In this study, we investigate the optical properties of annealed vanadium-doped GaAs films grown on substrates by metalorganic vapor phase epitaxy. The temperature dependence photoreflectance (PR) as-grown GaAs:V has been studied. We used fit with Third-Derivative Functional Form model to evaluate physical parameters. band gap and spin–orbit energies can be described Bose–Einstein statistical expression. PR spectra samples are measured after thermal annealing in order check any improvement quality material. signal amplitude decreased annealing. Degradation for at about 850 °C is observed revealing a poor layer surface states an important density recombination centers. lock-in analysis allows determine time constant sample before
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