Low temperature growth of clean single layer hexagonal boron nitride flakes and film for graphene-based field-effect transistors
作者： Lifeng Wang , Bin Wu , Hongtao Liu , Hanlin Wang , Yuyu Su
DOI: 10.1007/S40843-019-9419-0
关键词:
摘要: 二维六方氮化硼是一种理想的石墨烯电学器件介电层材料, 然而, 制备低成本和高质量的氮化硼材料仍是一个挑战. 本文使用等离子体化学气相沉积法, 500°C下在铜箔衬底上制备了三角形的BN晶畴及其薄膜. 通过使用锡箔纸包裹原料的方法避免了残留原料在BN表面的沉积. 当BN作为石墨烯场效应晶体管的介电层时, 基于石墨烯的场效应器件空穴与电子的迁移率分别为10500和4750 cm2 V‒1 s‒1, 明显优于在高温条件下制备的BN作为介电层的石墨烯器件, 间接表明了该方法可得到高质量的BN. 另外, 本工作也揭示了氮化硼的质量对石墨烯场效应器件的性能至关重要.
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