Control of Electron Scattering and Quantum Transition via Wave-Function Engineering in Nanostructures
作者： H. Sakaki
DOI: 10.1007/978-3-642-79232-8_6
关键词:
摘要: This paper describes a variety of attempts to manipulate the wavefunction Ψ(r) electrons by use novel semiconductor nanostructures. We discuss, in particular, how this Ψ-engineering approach enables one control various quantum transition processes such as scattering and relaxation thereby create device functions. review also four representative methods which nano-meter scale wire box structures are epitaxially grown clarify their potentials well limitations.
springer.com
sci-hub.st 参考文章(39)
Takashi Mimura, Satoshi Hiyamizu, Toshio Fujii, Kazuo Nanbu, A New Field-Effect Transistor with Selectively Doped GaAs/n-AlxGa1-xAs Heterojunctions Japanese Journal of Applied Physics. ,vol. 19, ,(1980) , 10.1143/JJAP.19.L225
H. Sakaki, K. Wagatsuma, J. Hamasaki, S. Saito, Possible applications of surface-corrugated quantum thin films to negative-resistance devices Thin Solid Films. ,vol. 36, pp. 497- 501 ,(1976) , 10.1016/0040-6090(76)90068-7
T. Inoshita, H. Sakaki, Electron relaxation in a quantum dot: Significance of multiphonon processes. Physical Review B. ,vol. 46, pp. 7260- 7263 ,(1992) , 10.1103/PHYSREVB.46.7260
D. Leonard, M. Krishnamurthy, C. M. Reaves, S. P. Denbaars, P. M. Petroff, Direct formation of quantum‐sized dots from uniform coherent islands of InGaAs on GaAs surfaces Applied Physics Letters. ,vol. 63, pp. 3203- 3205 ,(1993) , 10.1063/1.110199
H. Akiyama, S. Koshiba, T. Someya, K. Wada, H. Noge, Y. Nakamura, T. Inoshita, A. Shimizu, H. Sakaki, Thermalization effect on radiative decay of excitons in quantum wires. Physical Review Letters. ,vol. 72, pp. 924- 927 ,(1994) , 10.1103/PHYSREVLETT.72.924
U. Bockelmann, T. Egeler, Electron relaxation in quantum dots by means of Auger processes. Physical Review B. ,vol. 46, pp. 15574- 15577 ,(1992) , 10.1103/PHYSREVB.46.15574
Y. Nakamura, M. Tsuchiya, J. Motohisa, H. Noge, S. Koshiba, H. Sakaki, Formation of N-AlGaAs/GaAs edge quantum wire on (111)B micro facet by MBE and magnetic depopulation of quasi-one-dimensional electron gas Solid-state Electronics. ,vol. 37, pp. 571- 573 ,(1994) , 10.1016/0038-1101(94)90249-6
K. Hirakawa, H. Sakaki, J. Yoshino, Mobility modulation of the two-dimensional electron gas via controlled deformation of the electron wave function in selectively doped AlGaAs-GaAs heterojunctions. Physical Review Letters. ,vol. 54, pp. 1279- 1282 ,(1985) , 10.1103/PHYSREVLETT.54.1279
S. Tsukamoto, Y. Nagamune, M. Nishioka, Y. Arakawa, Fabrication of GaAs quantum wires on epitaxially grown V grooves by metal‐organic chemical‐vapor deposition Journal of Applied Physics. ,vol. 71, pp. 533- 535 ,(1992) , 10.1063/1.350695
Y. Nakamura, M. Tsuchiya, S. Koshiba, H. Noge, H. Sakaki, Modulation of one‐dimensional electron density in n‐AlGaAs/GaAs edge quantum wire transistor Applied Physics Letters. ,vol. 64, pp. 2552- 2554 ,(1994) , 10.1063/1.111571