摘要: In this Letter a new model for the band structure of n-Sn is proposed which compatible with experimental results reported on material and particularly measurements magnetoresistance pressure dependence conductivity (o) Hall coefficient (R) have been in relatively poor agreement models previously suggested. Theoretical calculations Herman, ' Liu Bassani, predict lowest conduction to be at center Brillouin zone I', (I', single group representation) symmetry, highest valence + (I"»' symmetry. This measurements' near 77 K oscillatory data' below 4'K, both show no measurable anisotropy. However, several unrelated require presence conduction-band minima (111) Magnetoresistance 200 by
harvard.edu
sci-hub.se 参考文章(3)
O. N. Tufte, A. W. Ewald, MAGNETORESISTANCE OF ORIENTED GRAY TIN SINGLE CRYSTALS Physical Review. ,vol. 122, pp. 1431- 1436 ,(1961) , 10.1103/PHYSREV.122.1431
William Paul, Band Structure of the Intermetallic Semiconductors from Pressure Experiments Journal of Applied Physics. ,vol. 32, pp. 2082- 2094 ,(1961) , 10.1063/1.1777022
Franco Bassani, David Brust, Effect of Alloying and Pressure on the Band Structure of Germanium and Silicon Physical Review. ,vol. 131, pp. 1524- 1529 ,(1963) , 10.1103/PHYSREV.131.1524