Top–down fabrication of horizontally-aligned gallium nitride nanowire arrays for sensor development

摘要: This paper demonstrates a high-throughput fabrication method of gallium nitride (GaN) nanowire (NW) and sub-micron wire (SMW) arrays using combination projection lithography, plasma etching, post-plasma wet etching techniques. Photoluminescence (PL), field emission scanning electron microscopy (FESEM), I-V measurements were used to characterize the GaN NW/SMW devices. These NWs/SMWs can be create highly-sensitive selective conductometric chemical/bio-sensors.The length width wires precisely customized. The varied from 5µm 5mm ranges 100nm 500nm. Such comprehensive control in geometry is difficult achieve with other methods. KOH greatly reduces surface roughness as well performance Complementary metal-oxide-semiconductor (CMOS) micro-electro-mechanical system (MEMS) devices incorporated on single chip this top-down method. In paper, we describe for manufacture horizontal aligned potential application UV detector, chemical/gas/biology sensors. An illustration alignment-free shown below:Display OmittedThis SEM image (×600 magnification) longest total (5000µm) serpentine shape. A number 81 NWs like one are die. We disclose approach single/multiple structure.We provide data quality our nanowires.We present response possible applications (chemical/gas/biology sensors) array.