作者: Antonio Martí , Antonio Luque
DOI: 10.1007/978-3-642-23369-2_8
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摘要: Intermediate band solar cells aim to exploit the energy of below bandgap photons. They are based on materials that characterised by existence an additional electronic (intermediate band) located in between conduction and valence band. An optimised IBSC has near same limiting efficiency potential (63.2%) than a triple junction but without requiring tunnel junctions connect single gap cells. This chapter reviews its fundamental theory introduces different approaches being followed towards implementation: quantum dots, insertion suitable impurities into semiconductor host at sufficiently high densities (bulk approach) molecular approaches.