Organic Schottky barrier photovoltaic cells based on MoOx/C60
作者： Minlu Zhang , Irfan , Huanjun Ding , Yongli Gao , C. W. Tang
DOI: 10.1063/1.3415497
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摘要: We report that the performance of indium tin oxide/molybdenum oxide/fullerene (ITO/MoOx/C60) photovoltaic cells is highly sensitive to method depositing MoOx film. The highest open-circuit voltage and short-circuit current are obtained using thermally evaporated MoOx. In contrast, sputtered produces lower efficiencies. X-ray ultraviolet photoemission analyses indicate pristine has a high work function 6.8 eV Mo6+ oxidation state, whereas argon-sputtered characterized by coexistence both Mo5+ states. ITO/MoOx/C60 consistent with functioning as Schottky barrier contact.
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