Method of forming emitter coupled logic bipolar memory cell using polysilicon Schottky diodes for coupling
作者： Mammen Thomas , Wen C. Ko
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摘要: An improved ECL bipolar memory cell is disclosed which comprises connecting the respective collectors of transistors in flip-flop circuit to bit lines using Schottky diodes protect against latch-up cell; and inversion circuits provide a buried emitter construction for alpha strike protection. In preferred embodiment, diode load devices, such as resistors or used coupled one word are made polysilicon facilitate cell, reduce total number contacts needed, enhance speed cell.
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