Variable resistive memory device including vertical channel PMOS transistor and method of manufacturing the same
作者： Nam Kyun Park
DOI:
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摘要: A semiconductor device having a vertical channel, variable resistive memory including the same, and method of manufacturing same are provided. The channel includes pillar formed on substrate an inner portion outer surrounding portion, junction regions in pillar, gate to surround pillar. has lattice constant smaller than that
lens.org 参考文章(29)
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